magnetron effect
英 [ˈmægnɪtrɒn ɪˈfekt]
美 [ˈmægnəˌtrɑn ɪˈfekt]
【电】磁控管效应
双语例句
- GaP films have been prepared on ZnS substrates by radio frequency ( RF) magnetron sputtering, the effect of the major deposition parameters, such as RF power, gas pressure, gas-flow rate and substrate temperature, on the deposition rate of GaP films were discussed.
采用磁控溅射方法成功地在ZnS衬底上制备了磷化镓（GaP）薄膜，并系统地研究了射频功率、气体流量、工作气压、衬底温度等主要工艺参数对GaP膜沉积速率的影响规律。 - CoFe/ CrPt exchange biased system was prepared by magnetron sputtering. In order to appear pinning effect, the films were annealed in a vacuum with applied magnetic field.
采用磁控溅射的方法制备了CoFe/CrPt钉扎的交换偏置体系，用外加磁场真空退火以获得钉扎场。 - In this paper, with respect to Co-Cr, Ni-Fe and Gd-Fe binary alloy thin films deposited by planar magnetron sputtering, the dependence of internal stress on Ar working gas pressure is studied, and the contribution of atomic peening effect to the stress is discussed.
以平面磁控溅射Co－Cr，Ni-Fe和Gd－Fe等二元合金薄膜为对象，研究其内应力与Ar工作气体压强的关系，并探讨原子喷丸效应对应力的影响。 - In this thesis, the composite wires with two different core layer were prepared on the basis of glass-coated melt-spinning method in combination with electroless deposition and magnetron sputtering. The giant magneto-impedance effect ( GMI) properties were investigated.
本文结合高频感应加热熔融拉丝法和化学镀方法制备了两种芯层不同的复合结构丝，对其巨磁阻抗效应（giantmagneto-impedanceEffect，简称GMI）进行了研究。 - Microstructures and electrical properties of ZnO: Al ( ZAO) films, grown on glass substrate by RF magnetron sputtering of ZnO target doped with Al2O3 ( 3 wt%), were characterized with X-ray diffraction and Hall effect measurement.
利用射频磁控溅射ZnO：Al（3wt%）陶瓷靶材制备ZAO薄膜，利用X射线衍射仪和霍尔测试仪分析了不同衬底温度和工作压强对薄膜结构和电学性能的影响。 - A6 relativistic magnetron resonant system is calculated and simulated by equivalent circuit and high frequency structure simulator ( HFSS of agilent), and the effect of end cap to resonant frequency is especially presented in this paper.
利用等效电路法和高频分析软件（HFSS）对A6相对论磁控管谐振系统进行了理论计算与模拟分析，着重考虑了相对论磁控管端帽的引入对谐振频率的影响。 - Because the performance of power supply greatly influences the technics effect, research and development of high performance magnetron sputtering power supply has great significance to meet the need of industry and improve the technics effect.
其中，由于溅射工艺所需的电源性能对工艺效果起着至关重要的作用，研究高性能磁控溅射电源对满足工业需求和对工艺的进一步提升有着重要的意义。 - In order to achieve better electrical property, FZO/ Ag/ FZO multilayer thin films were prepared with both use of RF and DC magnetron sputtering, and the effect of Ag layer thickness on the multilayer film properties was investigated.
为了获得更好的薄膜光电性能，我们采用直流磁控技术与射频磁控技术相结合的方法制备了FZO/Ag/FZO多层结构透明导电薄膜，重点研究了Ag层厚度对薄膜性能的影响。 - Aluminum oxide thin films prepared by sol-gel method under the the same annealing conditions as the films which prepared by response Magnetron sputtering, it is discovered that the films which prepared by sol-gel method have relatively weak effect on crystallization and TL.
在与溅射法相同的退火条件下采用溶胶凝胶法制备了Al2O3薄膜，通过检测发现此种工艺条件下制备的薄膜其结晶性能、热释光效应相对较弱。 - The Cr-doped PbTe films were deposited onto Si substrate by radio frequency magnetron sputtering and annealing. Effect of annealing time on the quality of films were investigated.
利用磁控溅射并通过退火的方法在Si衬底上制备Cr掺杂的PbTe薄膜，并研究了退火时间对薄膜制备的影响。 - Highly c-axis oriented ZnO thin films were prepared on Si ( 100) substrates with various thicknesses of Zn buffer layers by RF magnetron sputtering system. The effect of the Zn buffer layer thickness on the microstructure and optical properties of ZnO thin films was studied.
在Si（100）基底上制备具有c轴高择优取向的ZnO/Zn/Si（100）薄膜，研究了缓冲层厚度的变化对ZnO薄膜微观结构及其光致发光特性的影响。